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A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiO2 sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode p-n junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.
Date of Publication: 4 June 1992