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Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

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2 Author(s)
Tsung Yi Lu ; Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Tien Sheng Chao

A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the GM further to 29% more than the single-poly-Si gate structure without SiN capping layer.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 4 )