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Improved electrical and reliability Characteristics of HfN--HfO2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first Process

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12 Author(s)
Kang, J.F. ; Inst. of Microelectron., Peking Univ., Beijing, China ; Yu, H.Y. ; Ren, C. ; Wang, X.P.
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By using a high-temperature gate-first process, HfN--HfO2-gated nMOSFET with 0.95-nm equivalent oxide thickness (EOT) was fabricated. The excellent device characteristics such as the sub-1-nm EOT, high electron effective mobility (peak value ∼232 cm2/V·s) and robust electrical stability under a positive constant voltage stress were achieved. These improved device performances achieved in the sub-1-nm HfN--HfO2-gated nMOSFETs could be attributed to the low interfacial and bulk traps charge density of HfO2 layer due to the 950°C high-temperature source/drain activation annealing process after deposition of the HfN--HfO2 gate stack.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 4 )