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Dual-work-function metal gates by full silicidation of poly-Si with Co-Ni bi-Layers

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4 Author(s)
Liu, J. ; Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA ; Wen, H.-C. ; Lu, J.P. ; Kwong, D.-L.

Dual-work-function metal gates fabricated by full silicidation (FUSI) of Co-Ni bi-layer with doped poly-Si were investigated for the first time, along with single-metal FUSI systems of CoSi2 and NiSi. Complete conversion of poly-Si into Co-Ni alloy silicided metal gate (FUSI) CoxNi1-xSi2 was demonstrated. Although a linear relationship between work function and Ni percentage was observed for FUSI of undoped poly-Si systems, the work functions of doped CoxNi1-xSi2 are almost identical to those of doped NiSi FUSI metal gates. The alloy FUSI metal gates explored in this letter provide a new class of metal gates for CMOS devices that combine the advantages of both NiSi and CoSi2, i.e., proper work function tunability of NiSi and high thermal stability of CoSi2.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 4 )

Date of Publication:

April 2005

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