By Topic

Time domain signal analysis method applied to high signal level microwave detector circuit

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Wolski, M.R. ; Dept. of Electr. & Comput. Eng., Marquette Univ., Milwaukee, WI, USA ; Ishii, T.K.

The relationship between microwave power absorbed by a detector diode and the resulting detected voltage at high signal level is investigated. Experimental data is obtained from a zero biased diode mounted in a rectangular waveguide system operating at 9.5 GHz. The Alpa Industries Inc. 4561, 6724 and 6725 Schottky diodes and the MA-COM 1N23 point contact diode with 1 kΩ and 106 kΩ loads are examined. The P-V relationships are analyzed by solving a system of nonlinear differential equations based on a lumped parameter model of the microwave system and diode

Published in:

Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on

Date of Conference:

12-14 Aug 1990