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740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density

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9 Author(s)
Lutti, J. ; Sch. of Phys. & Astron., Cardiff Univ., UK ; Smowton, P.M. ; Lewis, G.M. ; Krysa, A.B.
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InP quantum-dot lasers grown on GaAs substrates and emitting in the 730-740 nm band with threshold current density as low as 190 A cm/sup -2/ for a 2000 /spl mu/m-long device with uncoated facets are reported.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 5 )