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High tangential signal sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications

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3 Author(s)
Zhirun Hu ; Sch. of Electr. & Electron. Eng., Univ. of Manchester, UK ; Vo, V.T. ; Rezazadeh, A.A.

Tangential signal sensitivity (TSS) of GaAs planar doped barrier (PDB) detector diodes as low as -55 dBm at 35 GHz has been achieved. In comparison with that of reported devices, this value is 6-dBm better, implying the diodes can detect much lower power hence widening the dynamic range of microwave/millimeter-wave power detectors.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:15 ,  Issue: 3 )