Skip to Main Content
This work describes the investigations of (Zr0.8Sn0.2)TiO4 compounds prepared by solid-state reaction techniques. The effect of La2O3, ZnO and NiO addition on microwave dielectric properties was investigated. The samples were sintered at temperatures Ts=1280 -1400 °C. The materials exhibit a dielectric constant εr∼36 and high values of the Q·f product from 30,000 to 55,000 at microwave frequencies. The measured temperature coefficient of the resonance frequency τf takes values in the range (-2÷+4) ppm/°C.
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International (Volume:2 )
Date of Conference: 4-6 Oct. 2004