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Surface characteristics of In and Zn oxides by atomic force microscopy

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2 Author(s)
Suchea, M. ; Microelectron. Dept., Crete Univ., Greece ; Kiriakidis, G.

Indium and zinc oxide (InOx, ZnO) thin films with different thickness were prepared by dc magnetron sputtering onto silicon substrates. Structural investigations carried out by atomic force microscopy (AFM) shown a strong correlation between surface topology and growth parameters. Grain radius (GR) and roughness (RMS) were found to be dependent on film thickness and deposition parameters. The results revealed a linear variation of both GR and RMS as a function of thickness, pressure, substrate temperature, and growth rate. All measurements were made at room temperature using AFM-tapping mode.

Published in:

Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International  (Volume:2 )

Date of Conference:

4-6 Oct. 2004

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