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Microscopic RF noise simulation and noise source modeling in 50 nm gate length CMOS

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3 Author(s)
Guofu Niu ; Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA ; Yan Cui ; Taylor, S.S.

The RF noise of 50 nm gate length CMOS is simulated using hydrodynamic noise simulation. Intrinsic noise sources for the Y- and H-representations are examined and models of intrinsic noise sources are proposed.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Date of Conference:

8-10 Sept. 2004