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A 47 GHz monolithically integrated SiGe push-push oscillator

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4 Author(s)
Wanner, R. ; Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany ; Pfost, M. ; Lachner, R. ; Olbrich, G.R.

We present a monolithically integrated push-push oscillator, fabricated in a production-near SiGe:C bipolar technology. The planar inductors have been simulated by a three dimensional electromagnetic field solver. The oscillator obtains an output power of 0 dBm at 47 GHz, while the fundamental signal at 23.5 GHz is -39 dBm. The single sideband phase noise level at 1 MHz offset frequency is -104 dbc/Hz.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Date of Conference:

8-10 Sept. 2004

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