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We present a monolithically integrated push-push oscillator, fabricated in a production-near SiGe:C bipolar technology. The planar inductors have been simulated by a three dimensional electromagnetic field solver. The oscillator obtains an output power of 0 dBm at 47 GHz, while the fundamental signal at 23.5 GHz is -39 dBm. The single sideband phase noise level at 1 MHz offset frequency is -104 dbc/Hz.