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Evidence of strong phonon-assisted resonant intervalley up-transfer for electrons in type-II GaAs-AlAs Superlattices

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4 Author(s)
Xiaodong Mu ; Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA ; Ding, Y.J. ; Wang, Z.M. ; Salamo, Gregory J.

We demonstrate that interface optical phonons can efficiently pump electrons from the quasi-X states to the quasi-Γ states in short-period type-II GaAs-AlAs superlattices. As a result, peculiar behaviors on these superlattices have been observed. First, photoluminescence intensity for the quasi-direct transition drastically increases as the temperature or pump power increases. Second, the dependence of the integrated photoluminescence intensity on the pump power exhibits a square power law.

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Quantum Electronics, IEEE Journal of  (Volume:41 ,  Issue: 3 )