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A new protection circuit for high-voltage current saturation of a lateral emitter switched thyristor (LEST) is proposed. We fabricated this circuit by employing a widely used insulated gate bipolar transistor compatible process. A high-voltage current saturation exceeding 200 V was measured in the EST with the proposed protection circuit, while the current saturation of the conventional LEST is limited to 17 V by the breakdown of the lateral MOSFET.
Date of Publication: March 2005