Referenced Items are not available for this document.
A new protection circuit for high-voltage current saturation of a lateral emitter switched thyristor (LEST) is proposed. We fabricated this circuit by employing a widely used insulated gate bipolar transistor compatible process. A high-voltage current saturation exceeding 200 V was measured in the EST with the proposed protection circuit, while the current saturation of the conventional LEST is limited to 17 V by the breakdown of the lateral MOSFET.
Published in:
Electron Device Letters, IEEE
(Volume:26
,
Issue:
3
)
Date of Publication: March 2005
- Page(s):
- 191 - 193
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8335092
- Digital Object Identifier :
- 10.1109/LED.2004.842255
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 28 February 2005
- Issue Date :
- March 2005
- Sponsored by :
- IEEE Electron Devices Society
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