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Nitride-based p-i-n bandpass photodetectors

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1 Author(s)
Chiou, Y. ; Dept. of Electron. Eng., Southern Taiwan Univ. of Technol., Tainan, Taiwan

Nitride-based p-i-n bandpass photodetectors with semitransparent Ni-Au electrodes were successfully fabricated and characterized. The photodetectors exhibit a 20-V breakdown voltage and a small dark current of 40 pA at 4-V reverse bias. It was found that spectral responsivity shows a narrow bandpass characteristics from 337 to 365 nm. Moreover, the peak responsivity was estimated to be 0.13 A/W at 354 nm, corresponding to a quantum efficiency of 44%. The relatively high response at shorter wavelength is due to the unoptimized thickness of p-Al0.1Ga0.9N absorption layer. At low frequency, the noise of the photodetector is dominant by the 1/f-type noise. For our 330×330 μm2 device, given a bias of -3.18 V, the corresponding noise equivalent power and normalized detectivity D* are calculated to be 5.6×10-12 W and 3.34×1011 cmHz0.5 W-1, respectively.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 3 )

Date of Publication:

March 2005

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