Cart (Loading....) | Create Account
Close category search window

Electrical performance and reliability improvement by using compositionally varying bi-Layer structure of PVD HfSixOy dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Akbar, M.S. ; Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA ; Choi, C.H. ; Rhee, S.J. ; Krishnan, S.A.
more authors

The effect of a bi-layer structure by varying the Hf composition in Hf-silicate dielectric in improving the electrical performance and reliability of high-κ gate stack n-MOSFETs has been investigated. Introducing Hf-silicate with 19.5% of Hf composition at the bottom layer and 28.5% of Hf on the top of it reduces the leakage current dramatically, while it minimally sacrifices increase in equivalent oxide thickness. Moreover, the structure reduces defect generation rate under gate injection and improves breakdown voltage in comparison to the control samples. Increase in Si-O bonds at the bottom interface, decrease in Coulomb scattering, and increase in dielectric constant in the top layer have been attributed to the overall performance increase of the gate stack.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 3 )

Date of Publication:

March 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.