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The electrical characteristics of HfO2 pMOSFETs prepared by B2H6 plasma doping and excimer laser annealing were investigated. Various metal gate electrodes were evaluated to protect the high-κ oxide during laser irradiation. Although the aluminum gate electrode showed superior reflectivity to the laser, the equivalent oxide thickness was increased due to the interaction between aluminum and HfO2, which resulted in reduced capacitance. In contrast, the Al-TaN stacked gate showed good reflectivity up to laser energy of 500 mJ/cm2 and improved capacitance was obtained compared with the Al gate. For the first time, the electrical characteristics of a HfO2 pMOSFET with an Al-TaN gate fabricated by plasma doping and excimer laser annealing were demonstrated. It was also demonstrated that plasma doping and excimer laser annealing combined with a metal gate could be applied for high-κ oxide MOSFET fabrication.