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High-performance nonvolatile HfO2 nanocrystal memory

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5 Author(s)
Yu-Hsien Lin ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Chien, Chao-Hsin ; Ching-Tzung Lin ; Chun-Yen Chang
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In this letter, we demonstrate high-performance nonvolatile HfO2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900°C rapid thermal annealing. With this technique, a remarkably high nanocrystal density of as high as 0.9 ∼ 1.9 × 1012 cm-2 with an average size <10 nm can be easily achieved. Because HfO2 nanocrystals are well embedded inside an SiO2-rich matrix and due to their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memories in terms of a considerably large memory window, high-speed program/erase (P/E) (1 μs/0.1 ms), long retention time greater than 108 s for 10% charge loss, and excellent endurance after 106 P/E cycles.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 3 )

Date of Publication:

March 2005

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