By Topic

Characterization of nickel Germanide thin films for use as contacts to p-channel Germanium MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Spann, J.Y. ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; Anderson, R.A. ; Thornton, T.J. ; Harris, G.
more authors

We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 μm. The resistivity values for films annealed in the range 350°C-500°C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10-7 Ω.cm2 can be realized using NiGe formed on heavily doped p-type germanium.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 3 )