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Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

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3 Author(s)
Higashiwaki, M. ; Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan ; Hirose, N. ; Matsui, T.

The effect of SiN surface passivation by catalytic chemical vapor deposition (Cat-CVD) on Al/sub 0.4/Ga/sub 0.6/N-GaN heterostructure field-effect transistors (HFETs) was investigated. The channel sheet resistance was reduced by the passivation due to an increase in electron density, and the device characteristics of the thin-barrier HFETs were significantly improved by the reduction of source and drain resistances. The AlGaN(8 nm)-AlN(1.3 nm)-GaN HFET device with a source/drain distance of 3 μm and a gate length of 1 μm had a maximum drain current density of 0.83 A/mm at a gate bias of +1.5 V and an extrinsic maximum transconductance of 403 mS/mm. These results indicate the substantial potential of Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier layers.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 3 )