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A submicrometer 252 GHz fT and 283 GHz fmax InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS)

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8 Author(s)
Li, J.C. ; HRL Labs., Malibu, CA, USA ; Chen, M. ; Hitko, D.A. ; Fields, C.H.
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The selectively implanted buried subcollector (SIBS) is a method to decouple the intrinsic and extrinsic C/sub BC/ of InP-based double-heterojunction bipolar transistors (DHBTs). Similar to the selectively implanted collector (SIC) used in Si-based bipolar junction transistors (BJTs) and HBTs, ion implantation is used to create a N+ region in the collector directly under the emitter. By moving the subcollector boundary closer to the BC junction, SIBS allows the intrinsic collector to be thin, reducing /spl tau//sub C/, while simultaneously allowing the extrinsic collector to be thick, reducing C/sub BC/. For a 0.35 × 6 μm2 emitter InP-based DHBT with a SIBS, 6 fF total C/sub BC/ and >6 V BV/sub CBO/ were obtained with a 110-nm intrinsic collector thickness. A maximum fT of 252 GHz and fmax of 283 GHz were obtained at a V/sub CE/ of 1.6 V and I/sub C/ of 7.52 mA. Despite ion implantation and materials regrowth during device fabrication, a base and collector current ideality factor of /spl sim/2.0 and /spl sim/1.4, respectively, at an I/sub C/ of 100 μA, and a peak dc /spl beta/ of 36 were measured.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 3 )