By Topic

MOS table models for circuit simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Bourenkov, V. ; Tyndall Nat. Inst., Cork, Ireland ; McCarthy, K.G. ; Mathewson, A.

Compact MOSFET models for circuit simulation face several competing requirements, such as fast execution times, good accuracy and small memory requirements. This paper describes novel interpolation methods for accurate evaluation of MOSFET characteristics in weak, moderate, and strong inversion regions. These methods form the basis of a new table look-up model implemented in SPICE3F5. The table model provides great flexibility in adjustment of the simulation accuracy, speed, and memory consumption by providing a choice of interpolations and data tables. Application of the model to circuit simulation gives very accurate results in dc, transient, and ac analyses.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:24 ,  Issue: 3 )