Referenced Items are not available for this document.
Copper films of different thicknesses of 0.1, 0.5, and 1 μm were deposited by DC magnetron sputtering on the adhesion promoting Ta layer deposited on the silicon (100) wafer. The films were annealed in vacuum at temperature 200° C and their elastic modulus and hardness were measured by nanoindentation technique. The influence of thickness and annealing temperature on the mechanical behavior of copper thin films is explored in the present work.
Published in:
Electronics Packaging Technology Conference, 2004. EPTC 2004. Proceedings of 6th
Date of Conference: 8-10 Dec. 2004
- Page(s):
- 343 - 347
- Print ISBN:
- 0-7803-8821-6
- INSPEC Accession Number:
- 8292970
- Digital Object Identifier :
- 10.1109/EPTC.2004.1396631
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
