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Monolithic large-signal transimpedance amplifier for use in multi-gigabit, short-range optoelectronic interconnect applications

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6 Author(s)
Vilches, A. ; Dept. of Electr. & Electron. Eng., Imperial Coll. London, UK ; Loga, R. ; Rahal, M. ; Fobelets, K.
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A novel large-signal transimpedance amplifier front-end, intended for monolithic integration with a Si p-i-n diode and employing HBT-CMOS technology for use in short-range optoelectronic interconnects is proposed. Simulated bandwidth and gain are >4 Gbits/s and 43 dBΩ, respectively, while driving a 100-fF load to TTL voltage levels.

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:52 ,  Issue: 2 )