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A dielectric tunnel RC device model for magnetic tunnel junction in magnetic random access memory cell

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5 Author(s)
Li, Simon C. ; Taiwan SPIN Res. Center, Nat. Yunlin Univ. of Sci. & Technol., Touliu, Taiwan ; Jia-Mou Lee ; Shu, Min-Fong ; Su, J.P.
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The dielectric tunnel resistance-capacitance model of the thin insulating layer in a magnetic tunnel junction for device operation in magnetic random access memory circuit is proposed. The curve-fitting function derived from Simmons' tunneling equations describing the variation of dielectric tunnel resistance and tunnel capacitance before the tunneling, is well characterized. In addition, a characterization technique developed from the mathematical analysis of dielectric tunnel resistance and capacitance with ramp voltage characteristics measured by conductive atomic force microscopy is established.

Published in:

Magnetics, IEEE Transactions on  (Volume:41 ,  Issue: 2 )

Date of Publication:

Feb. 2005

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