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High-T0 strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 μm

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4 Author(s)
Li, W. ; Dept. of Electr. Eng., Columbia Univ., New York, NY, USA ; Heroux, J.B. ; Shao, H. ; Wang, W.I.

Strain-compensated InGaAsSb-AlGaAsSb quantum-well (QW) lasers emitting near 2.5 μm have been grown by solid-source molecular beam epitaxy. The relatively high arsenic composition causing a tensile strain in the Al0.25GaAs0.08Sb barriers lowers the valence band edge and the hole energy level, leading to an increased hole confinement and improved laser performance. A 60% external differential efficiency in pulsed mode was achieved for 1000-μm-long lasers emitting at 2.43 μm. A characteristic temperature T0 as high as 163 K and a lasing-wavelength temperature dependence of 1.02 nm/°C were obtained at room temperature. For 2000 × 200 μm2 broad-area three-QW lasers without lateral current confinement, a low pulsed threshold of 275 A/cm2 was measured.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 3 )

Date of Publication:

March 2005

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