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High-speed Modulation of InGaAs: Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-μm emission wavelength

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7 Author(s)
Kuo, H.C. ; Inst. of Electro-opt. Eng., Nat. Chiao-Tung Univ., Hsin-Tsu, Taiwan ; Chang, Y.H. ; Yao, H.H. ; Chang, Y.A.
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1.27-μm InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than ∼35% as the temperature raised from room temperature to 70°C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of ∼5.25 GHz/(mA)12/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25°C to 70°C.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 3 )

Date of Publication:

March 2005

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