By Topic

Process optimization by advanced process control with fault detection system for flash memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Tuung Luoh ; Technol. Dev. Center, Macronix Int. Co. Ltd., Hsinchu, Taiwan ; Chang-Wei Liao ; Li-Chung Yang ; Ling-Wuu Yang
more authors

Plasma damaged 0.18 μm flash memory device has been resolved by integrating advanced process control with fault detection and classification (APC FDC) system in ILD HDP PSG process. PSG plasma damage to device was detected by real-time monitoring APC control system with multivariate statistically calculation to detect out-of-control conditions within five minutes. The unhealthy recipe contents and the hardware healthy status are detected by integrating APC FDC system. After we analyzing the fault detection and classification function, APC system successfully predicts the same results as wafer acceptance test and wafer sort yield. Recipe and hardware are modified to eliminate the plasma damage according the analysis results.

Published in:

Semiconductor Manufacturing Technology Workshop Proceedings, 2004

Date of Conference:

9-10 Sept. 2004