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NiSi was considered to be the most promising silicide candidate to replace CoSi2 for sub-90 nm integrated circuit manufacturing. The dependence of NiSi formation on heating ramp rate is studied by NiSi/Si Schottky contact. A higher ramp rate for NiSi formation is demonstrated to be responsible for the degraded properties of NiSi/Si Schottky contact.
Date of Publication: 20 Jan. 2005