Referenced Items are not available for this document.
NiSi was considered to be the most promising silicide candidate to replace CoSi2 for sub-90 nm integrated circuit manufacturing. The dependence of NiSi formation on heating ramp rate is studied by NiSi/Si Schottky contact. A higher ramp rate for NiSi formation is demonstrated to be responsible for the degraded properties of NiSi/Si Schottky contact.
Published in:
Electronics Letters
(Volume:41
,
Issue:
2
)
Date of Publication: 20 Jan. 2005
- Page(s):
- 103 - 104
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 8266217
- Digital Object Identifier :
- 10.1049/el:20057321
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 22 February 2005
- Issue Date :
- 20 Jan. 2005
- Sponsored by :
- Institution of Engineering and Technology
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