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Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing

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3 Author(s)
Orwa, J.O. ; Sch. of Electron. & Phys. Sci., Univ. of Surrey, Guildford, UK ; Silva, S.R.P. ; Shannon, J.M.

Because of the ability to deliver large voltage and current transients and limit power dissipation, a single bipolar pulse applied through a series capacitor results in forming at lower voltages with more uniformity compared to unipolar pulses. In addition, the on-resistances following bipolar pulse stressing are more uniform compared to unipolar pulses.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 2 )