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A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications

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4 Author(s)
Junxiong Deng ; Dept. of Electr. & Comput. Eng., Univ. of California, La Jolla, CA ; Gudem, P.S. ; Larson, L.E. ; Asbeck, P.M.

The linearity of a silicon-germanium (SiGe) HBT power amplifier (PA) is analyzed with the help of a power-dependent coefficient Volterra technique. The effect of emitter inductance is included and the dominant sources of nonlinearity are identified. A dynamic current biasing technique is developed to improve the average power efficiency for wide-band code-division multiple-access (WCDMA) PAs. The average power efficiency is improved by more than a factor of two compared to a typical class-AB operation, while the power gain keeps roughly constant. The measured adjacent channel power ratio with 5and 10-MHz offsets at 23.9-dBm average channel output power are -33 and -58.8 dBc, respectively, and satisfies the Third-generation partnership project WCDMA specifications. The output power at the 1-dB compression point is 25.9 dBm

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:53 ,  Issue: 2 )

Date of Publication:

Feb. 2005

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