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The origin of extended dislocations induced by high-dose ion implantation

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5 Author(s)
N. Tsuchiya ; Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan ; O. Fujii ; K. Umezawa ; M. Iwase
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The origin and the generation mechanism of ion implantation-induced dislocations is investigated with an Si3N4 band line/space pattern. The Si3N4 film-edge stress not only causes dislocation propagation but also causes the formation and deformation of extended dislocations at the initial stage of annealing. The behavior is clarified that the dislocation loops are deformed into pattern-edge dislocation half loops, which accumulate at the film edge and are punched out from the edge.

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:18 ,  Issue: 1 )