By Topic

High-gain direct-coupled matrix distributed amplifier using active feedback topology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Won Ko ; Sch. of Electr. & Comput. Sci., Seoul Nat. Univ., South Korea ; Youngwoo Kwon

A high-gain matrix distributed amplifier (DA) was developed using a commercial GaAs PHMET foundry for 40-Gb/s baseband applications. Two tiers of matrix DA are directly coupled using a lumped DC level-shift circuit. The DC bias level of the second tier can be tuned using the level-shift circuit for optimum gain. The gain of the matrix DA has been optimized using an active feedback cascode topology, which allows the gain-bandwidth product (GBWP) to be maximized while avoiding instability problems. In order to improve the gain, the second tier is shifted to the output load. The fabricated single-chip matrix DA with a size of 2.4 mm × 1.4 mm showed a high gain of 19 dB, and an average noise figure of 5.7 dB with a 48-GHz bandwidth. The GBWP is 428 GHz, which corresponds to the highest performance using GaAs technology for matrix DAs.

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

Date of Conference:

24-27 Oct. 2004