Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Relaxation oscillation simulations and dilute magnetic semiconductor RTDs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Grubin, H.L. ; Hartford Univ., West Hartford, CT, USA

A robust transient Wigner distribution function simulation procedure implemented for studying relaxation oscillations in resonant tunneling structures is applied to structures in which the barriers and/or quantum well is designed with dilute magnetic semiconductors (DMS). The function of the DMS layers is to provide a means, in the presence of an external magnetic field, to change the relative population of spin-up and spin-down carriers. This population dependence means that a magnetic field can control the current voltage peak-to-valley ratio and consequently the maximum frequency of self-excited oscillations. These simulations permit the exploration of design principles for DMS relaxation oscillators. In the present study they are used to explore the magnetic field dependence of the spin-up and spin-down charge distributions as a function of bias.

Published in:

Nanotechnology, 2004. 4th IEEE Conference on

Date of Conference:

16-19 Aug. 2004