Modeling and analysis of carbon nanotube interconnects and their effectiveness for high speed VLSI design

Semiconducting carbon nanotubes (CNTs) have gained immense popularity as possible successors to silicon as the channel material for ultra high performance field effect transistors. On the other hand, their metallic counterparts have often been regarded as ideal interconnects for the future technology generations. Owing to their high current densities and increased reliability, metallic-single walled CNTs (SWCNTs) have been of fundamental research both in theory as well as experiments. Metallic CNTs have been modeled for RF applications using an LC model. In this paper, we present an efficient circuit compatible RLC model for metallic SWCNTs, and analyze the impact of SWCNTs on the performance of ultra scaled digital VLSI design.