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This paper addresses some key issues to look over an efficient strategy to integrate carbon nanotube devices in electronic structures. Proper microfabricated test patterns have been designed to deposit in a controlled way single wall nanotube ropes between different couples of source and drain electrodes, providing a common back gate for current modulation. Nanotubes have been fabricated by the laser ablation technique and their placement has been guided using a self-assembly method based on a high-frequency electric field. The nanotubes have been characterized by micro-Raman spectroscopy, SEM and AFM imaging. A good electrical connection between the metallic contacts and nanotube ropes was obtained, enabling the measurement of I-V characteristics of carbon nanotube field effect transistors.