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We report experimental results of the electric transport properties of single-walled carbon nanotubes (SWNTs) functionalized by plasma ion irradiation method, where purified SWNTs and Cs-encapsulating SWNTs are used. SWNTs bundles are well dropped between source and drain electrodes of the field effect transistor (FET) configuration. Voltage-current characteristics, gate bias dependence, and measuring temperature dependence are investigated. It is found that purified SWNTs exhibit p-type semiconducting behavior. Transport measurements for Cs encapsulating individual SWNTs have also been performed, the result of which is discussed.