Cart (Loading....) | Create Account
Close category search window

A two-level redundancy scheme for enhancing scalability of molecular-based crossbar memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yoon-Hwa Choi ; Dept. of Comput. Eng., Hongik Univ., Seoul, South Korea ; Myeong-Hyeon Lee ; Young Kwan Kim

This paper presents a two-level redundancy scheme for enhancing scalability of molecular-based crossbar memories. It is based on multiple molecular memory modules with spares and address translation to cope with the expected high rate of defects in chemically fabricated nanocircuits. Molecular crossbars on top of a silicon-based die providing address translation demonstrate a notable improvement in scalability of defect-prone molecular memories.

Published in:

Nanotechnology, 2004. 4th IEEE Conference on

Date of Conference:

16-19 Aug. 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.