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Compact current and current noise models for single-electron tunneling transistors

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3 Author(s)
Hu Chaohong ; Comput. Eng. Lab., Delft Univ. of Technol., Netherlands ; Cotofana, S.D. ; Jiang Jianfei

This paper presents an analytic current model for capacitively coupled single-electron tunneling transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and compare them with the corresponding characteristics calculated by the full master equation method. The results indicate that the proposed models with M=3 fit well with the full master equation method at arbitrary device parameters when T<0.1 e2/kBC and VDS<10 e/C. Due to their simplicity and accuracy in a wide range of working conditions (arbitrary device parameters, T<0.1 e2/kBC and VDS<10 e/C) the proposed current and noise models can be utilized in large-scale circuit simulation.

Published in:

Nanotechnology, 2004. 4th IEEE Conference on

Date of Conference:

16-19 Aug. 2004