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Suppression of quantum interference induced vortices and threshold voltage shift due to the inclusion of inelastic scattering in ultra small fully depleted SOI MOSFETs

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2 Author(s)
M. J. Gilbert ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; D. K. Ferry

The ever shrinking dimensions of semiconductor device technology have placed great importance on quantum interference effects. More interest is focusing upon fully depleted SOI MOSFET, where we find many interesting effects. In this paper, we examine the effect of scattering on the turbulent flow of the electron density in SOI MOSFET devices. Further, we also investigate this effect on the threshold voltage of these ultra small devices. We find that the inclusion of scattering suppresses the vortices that form in the active regions of the device creating a more disordered flow and shifting the threshold voltage to higher levels that previously observed.

Published in:

Nanotechnology, 2004. 4th IEEE Conference on

Date of Conference:

16-19 Aug. 2004