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Modeling electronic behavior of carbon nanotube junction devices

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2 Author(s)
Q. W. Shi ; Dept. of Phys., Univ. of Sci. & Technol. of China, Hefei, China ; Jie Chen

In this paper, we explore the electronic transport behavior of carbon nanotube (CNT) junction coherent devices. The sample device we studied is a CTN junction subsuming of (5,5)-(9,0)-(5,5) double knee nano-metal-metal-metal (NMMM) junctions. Another consists of (6,6)-(10,0)-(6,6) double knee nano-metal-semiconductor-metal (NMSM) junctions. Key ideas in our proposed work include the effective scheme to calculate the surface Green's function of the interfaces in coherent devices. In addition, by applying the nearest-neighbor π-orbital tight-binding model, the quantum conductances of these double knee junctions are calculated based on Landauer-Buttiker formula. Such practices allow us to gain some deep insights of coherent device constraints and mesoscopic integrated circuit characteristics, which help us to explore more complex systems in the future.

Published in:

Nanotechnology, 2004. 4th IEEE Conference on

Date of Conference:

16-19 Aug. 2004