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Argon ion etching assisted by CF4 gas using a mask from self assembly of polystyrene spheres was performed on Si(100) substrates. The etch process is calibrated for the spheres to achieve a good etch rate while maintaining the spherical geometry of the PS spheres during etching. Grooves with vertical side walls and depth of 90 nm were successfully formed. Triangular shaped grooves of mean size 110 nm were etched. NiFe was deposited into the grooves in Si substrate to form embedded media. Scanning electron microscopy and magnetic force microscopy are used to study the etching profiles and magnetic domain distribution of dots.