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In this article, we report on electrical and memory properties of triple high-κ stacks (Al2O3/HfO2/Al2O3) with high pressure (10 atm) H2 and D2 annealing for SONOS type flash memory device applications. For 3 nm-thick Al2O3/10 nm-thick HfO2/10 nm-thick Al2O3 (AHA) stack, memory window (M.W.) of 1.4 V at programming/erasing (P/E) condition of ±6 V/1-2 msec was obtained. In addition, high pressure D2 annealed sample shows improved retention characteristics such as large memory window, and low slope per decade with retention time.