By Topic

STTM-promising nanoelectronic DRAM device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Seung Jae Baik ; Semicond. R&D Center, Samsung Electron. Co., Ltd., Gyeonggi, South Korea ; Zongliang Huo ; Seung-Hyun Lim ; In-Seok Yeo
more authors

We have examined STTM as the alternative to DRAM in terms of scalability, operation power, and sensing signal. The characteristics of STTM are shown to strongly depend on those of vertical transistor. To obtain maximum performance, fully depleted vertical transistor is essential. Moreover, it is shown that scaling below 50 nm could exhibit long enough retention time for nonvolatile random access memory application.

Published in:

Nanotechnology, 2004. 4th IEEE Conference on

Date of Conference:

16-19 Aug. 2004