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High-temperature, low-power 8-MegΩ by 1.2-MegHz SOI-CMOS transimpedance amplifier for MEMS-based wireless sensors

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3 Author(s)
L. Toygur ; Case Western Reserve Univ., Cleveland, OH, USA ; X. Yu ; S. Garverick

This paper reports a high-temperature, wide-gain-bandwidth SOI-CMOS transimpedance amplifier that is well suited for application to MEMS-based impedance sensors and oscillators. The amplifier was fabricated using a fully depleted 0.5-μm technology and achieves a gain-bandwidth of 8 MegΩ by 1.2 MegHz at room temperature, drawing just 0.66 mW from a 3.3-V power supply. Gain and bandwidth remain above 2 MegΩ and 0.3 MegHz, respectively, at all temperatures up to 300°C, while power consumption remained under 1 mW. Die area is just 8500 μm2.

Published in:

SOI Conference, 2004. Proceedings. 2004 IEEE International

Date of Conference:

4-7 Oct. 2004