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Analysis and design of digital CMOS circuits in hybrid SOI-epitaxial technology with different crystal orientations

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5 Author(s)
Das, K.K. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Shih-Hsien Lo ; Ching-Te Chuang ; Bernstein, K.
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This paper discusses the analysis and design of digital CMOS circuits in hybrid SOI-epitaxial technology with different crystal orientations. Various mobility enhancement schemes, such as strained Si channel devices, utilization of process/structure induced stresses, and use of different crystal orientation, have been proposed.

Published in:

SOI Conference, 2004. Proceedings. 2004 IEEE International

Date of Conference:

4-7 Oct. 2004