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Independently driven double-gate MOSFETs (DGFETs) facilitate design of analog circuits under digital logic constraints and provide in-circuit parameter adaptability through threshold voltage control. Threshold voltage tuning is achieved by biasing one of the two gates where as strong coupling of surface potentials at the two interfaces provides a low resistance feedback path. The geometry also allows a back-floating gate NVRAM structure with superior scalability and floating gate related analog applications without any read disturbance. This paper gives examples across breadth of circuits where this tunability is exploited.
Date of Conference: 4-7 Oct. 2004