Referenced Items are not available for this document.
In this paper, new SRAM cells are proposed to lower the operable Vdd with improving the soft-error rate (SER), static-noise margin (SNM), writing margin, and cell current. The cells feature uses of a new fully-depleted (FD) SOI, called dynamic-double-gate SOI (D2G-SOI), and uses dual power supply to boost the word-line voltage and power supply while bit-line voltage is maintained low to keep power consumption low.
Published in:
SOI Conference, 2004. Proceedings. 2004 IEEE International
Date of Conference: 4-7 Oct. 2004
- Page(s):
- 109 - 111
- Print ISBN:
- 0-7803-8497-0
- INSPEC Accession Number:
- 8273725
- Digital Object Identifier :
- 10.1109/SOI.2004.1391578
- Product Type:
- Conference Publications
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