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Wafer-level uniaxially strained s-SOI by direct mechanical stress

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4 Author(s)
Kirk, H.R. ; Silicon Genesis Corp., San Jose, CA, USA ; Malik, I.J. ; Sullivan, J. ; Kang, S.

This paper reports a wafer-level uniaxial strain technology for strained SOI (s-SOI) that uses direct mechanical stress and can be additive to local uniaxial strain for further transistor performance improvement. Cylindrical stress bonding of the wafers can generate compressive or tensile uniaxial strain on a thin device silicon film.

Published in:

SOI Conference, 2004. Proceedings. 2004 IEEE International

Date of Conference:

4-7 Oct. 2004