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Influence of the mechanical strain induced by a metal gate on electron and hole transport in single and double-gate SOI MOSFETs

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6 Author(s)

We study the impact of the mechanical strain induced by a TiN metal gate on carrier transport in thin body SOI MOSFETs. The strain induced mobility variation has been calculated as a function of channel orientation and gate length, considering both n-MOS and p-MOS transistors with single or double gate architectures.

Published in:

SOI Conference, 2004. Proceedings. 2004 IEEE International

Date of Conference:

4-7 Oct. 2004