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Fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back technique

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5 Author(s)
Aberg, I. ; MIT Microsyst. Technol. Lab., Cambridge, MA, USA ; Olubuyide, O.O. ; Li, J. ; Hull, R.
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This paper discusses the fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back technique with total thickness of 25 nm. We have shown that the etch back process does not roughen the surface. By secondary ion mass spectroscopy (SIMS), we have shown a reduction in peak Ge fraction from the as grown 55% to 50% as a result of thermal processing.

Published in:

SOI Conference, 2004. Proceedings. 2004 IEEE International

Date of Conference:

4-7 Oct. 2004